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Samsung PM981 256 GB

256 GB
Capacity
Samsung Phoenix
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
SSD Controller
Controller
The Samsung PM981 is a solid-state drive in the M.2 2280 form factor, launched in August 2017. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the Samsung PM981 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Phoenix (S4LR020) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer TLC NAND flash on the PM981, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 25 GB, once it is full, writes complete at 600 MB/s. The PM981 is rated for sequential read speeds of up to 3,000 MB/s and 1,300 MB/s write; random IO reaches 130K IOPS for read and 310K for writes.
At its launch, the SSD was priced at 59 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Samsung PM981 256 GB is unknown.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: Aug 2017
Price at Launch: 59 USD
Part Number: MZVLB256HAHQ-00000/07
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: Unknown (Idle)
Unknown (Avg)
5.7 W (Max)

Controller

Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 1 Tbit
Topology: Charge Trap
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB

DRAM Cache

Type: LPDDR3
Name: Samsung
Capacity: 512 MB
(1x 512 MB)

Performance

Sequential Read: 3,000 MB/s
Sequential Write: 1,300 MB/s
Random Read: 130,000 IOPS
Random Write: 310,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: approx. 25 GB
Speed when Cache Exhausted: approx. 600 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

May 5th, 2024 16:47 EDT change timezone

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