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Samsung PM897 3.8 TB

3.8 TB
Capacity
Samsung MKX Metis
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
Back
proSSD
Back
PCB Front
proSSD
PCB Front
DRAM
proSSD
DRAM
Flash
proSSD
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM897 is a solid-state drive in the 2.5" form factor, launched on January 20th, 2021. It is only available in the 3.8 TB capacity listed on this page. With the rest of the system, the Samsung PM897 interfaces using a SATA 6 Gbps connection. The SSD controller is the MKX (Metis S4LR059) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the PM897, the flash chips are made by Samsung. The PM897 is rated for sequential read speeds of up to 560 MB/s and 530 MB/s write; random IO reaches 97K IOPS for read and 60K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 21024 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Overprovisioning: 2567.7 GB / 71.8 %
Production: Active
Released: Jan 20th, 2021
Part Number: MZ7L33T8HBNA-00A07
Market: Enterprise

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 1.4 W (Idle)
2.3 W (Avg)
3.0 W (Max)

Controller

Manufacturer: Samsung
Name: MKX (Metis S4LR059)
Architecture: ARM 32-bit Cortex-R4
Core Count: Triple-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Part Number: K9DVGB8J1B-DCK0
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
NAND 2 Manufacturer:Samsung
NAND 2 Name:V-NAND V6
NAND 2 Part Number:K9OUGB8J1B-CCK0
NAND 2 Type:TLC
NAND 2 Technology:128-layer
NAND 2 Speed:1200 MT/s
NAND 2 Capacity:4 chips x 4 Tbit
NAND 2 Toggle:4.0
NAND 2 Die Size:102 mm² (5.0 Gbit/mm²)
NAND 2 Topology:Charge Trap
NAND 2 Dies per Chip:8 dies x 512 Gbit
NAND 2 Planes per Die:2 Planes
NAND 2 Decks per Die:1 Deck
NAND 2 Word Lines:136 per NAND String (94.1% Vertical Efficiency)
NAND 2 Read Time tR:45 µs
NAND 2 Program Time tProg:390 µs
NAND 2 Block Erase Time tBERS:3.5 ms
NAND 2 Die Read Speed:711 MB/s
NAND 2 Die Write Speed:82 MB/s
NAND 2 Page Size:16 KB

DRAM Cache

Type: LPDDR4
Name: SAMSUNG K4FJE6T4HM-BGCK
Capacity: 4096 MB
(1x 4096 MB)

Performance

Sequential Read: 560 MB/s
Sequential Write: 530 MB/s
Random Read: 97,000 IOPS
Random Write: 60,000 IOPS
Endurance: 21024 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 3.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

SSD actually has 6TB of Flash
4x K9DVGB8J1B-DCK0 = 4x 1TB TLC
+
4x K9OUGB8J1B-CCK0 = 4x 512GB TLC

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning
May 1st, 2024 12:43 EDT change timezone

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