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Effect of interfacial disordered spins on the magnetism of Co/Si multilayers

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Abstract

The influence of the Si spacer layer on the structural and magnetic properties of Co/Si multilayers is studied. The role of disordered surface spins at the interface of the multilayers is also studied. This study is performed by characterizing a series of samples [Co(50 Å)/Si(tSiÅ)]20 prepared by DC magnetron sputtering. Structural and microstructural studies suggest that the crystallite size is increased with decrease in the Si layer thickness. The magnetization increases and tends to the bulk value of Co while decreasing the thickness of the Si layers. Effect of interfacial disordered spins changes the shape of the hysteresis loop observed in the low field regime. The disordered surface spins lead to the rise of a crossed magnetic hysteresis loop of the multilayers.

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Acknowledgements

Some of the measurements performed at the Central facility of Industrial Research & Consultancy Centre (IRCC) and Sophisticated Analytical Instrument Facility (SAIF) at IIT Bombay are acknowledged.

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  1. Department of Physics, Indian Institute of Technology Bombay, Mumbai, 400076, India

    Ranjan Roy, Dushyant Singh & M. Senthil Kumar

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All authors contributed to the study conception, design and analysis. Material preparation, data collection, analysis and manuscript writing were performed by RR. The first draft of the manuscript was written by RR and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to M. Senthil Kumar.

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Roy, R., Singh, D. & Kumar, M.S. Effect of interfacial disordered spins on the magnetism of Co/Si multilayers. J Mater Sci: Mater Electron 34, 762 (2023). https://doi.org/10.1007/s10854-023-10192-5

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