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Electrical properties of Ga/V-modified ZnO ceramic thermistors

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Abstract

The Zn1−xGaxO (x = 0–0.020) ceramics modified with V2O5 were prepared by solid-state reaction method. The phase composition, microstructure, electrical conductivity, temperature sensitivity, and thermal aging property were investigated. The main phase of prepared ceramics is a hexagonal wurtzite crystal structure with a space group of P63mc (186). Ga2O3 phase was detected in ceramics when the content of Ga-ion x is higher than 0.010. V2O5 acts as sintering aids and electrical stabilizer and enhanced the ceramic sintering ability. The Ga/V-modified ZnO ceramics exhibit typical NTC characteristics and have high temperature sensitivity with material constant of B values ranging from 3659 to 4590 K. The electrical properties and aging characteristics were studied with alternating current impedance spectrum and X-ray photoelectron spectroscopy. The Ga/V-co-modified ZnO ceramics show high electrical stability with resistance change rate (ΔR/R0) less than 1.85% after aged at 150 °C for 1000 h. The increase of resistance by aging mainly came from the grain boundary effect.

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Acknowledgements

This work is supported by the research funds from the National Natural Science Foundation of China (No. 51767021), Research and development program in key areas of Guangdong Province, China (No. 2019B090913002), and the General Project of Scientific Research Project of Hunan Provincial Department of Education Scientific, China (No. 19C0342).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Central South University, Changsha, 410083, China

    Bicai Li, Zhicheng Li, Shuyan Zhang, Dicheng Peng, Caiyun Gao & Hong Zhang

  2. School of Materials and Chemical Engineering, Hunan City University, Yiyang, 413000, China

    Bicai Li

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  1. Bicai Li
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Correspondence to Hong Zhang.

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Li, B., Li, Z., Zhang, S. et al. Electrical properties of Ga/V-modified ZnO ceramic thermistors. J Mater Sci: Mater Electron 32, 28792–28806 (2021). https://doi.org/10.1007/s10854-021-07264-9

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