Cluster PVD

• Industry proven thin film equipment with high throughput and long term reliability.
• Simple and elegant vacuum design, and carefully manufactured in the USA to ensure high quality for vacuum processes.
• Industry standard DeviceNet/PLC automation control.
• Industry proven and versatile DC/PDC/RF magnetron deposition (reactive, non-reactive) processes.
• Low cost of ownership (CoO) with ease of maintenance, and high availability of Commercial off the Shelf (COTS) parts with extensive documentation.
• Optimized magnetron for RF magnetron high rate Al₂O₃ deposition, and thick magnetic sputtering target (~4mm for NiFe) to increase productivity.
• Windows based user-friendly, SEMI standard GUI software.

Production Thin Film Process

Production Thin Film Samples

	RF Magnetron Sputtered Al2O3 RF Magnetron sputtered Al2O3 deposition rate is typically >800A/min, ~50% higher than pure RF sputtered Wafer surface temperature < 50oC during process with backside cooling High throughput for up to ~3μm film deposition
	Reactive Sputtered SiO2 film Reactive sputtered SiO2 film has typical deposition rate >60nm/min; thickness uniformity 1σ<0.5%; Optimized Optical Loss for ~1um film < 5db/cm Full-face sputtering with no particle contamination and high target usage
	DC Magnetron Sputtered NiFe film Magnetic NiFe film has deposition rate ~15A/s/kW; thickness uniformity 1σ<1% Excellent magnetic softness with Hc_h < 0.2Oe, Hk_h < 5Oe; Sqr_h < 5%
	Reactive Sputtered AlN film Reactive sputtered AlN film has deposition rate ~3A/s/kW; thickness uniformity 1σ<1%; Refractive index around 1.94 Reactive sputtered AlN film has typically (002) oriented column structure, with thermal conductivity around 30~50 W/m-K Optimizing film properties via substrate biasing and heating up to 400oC

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