HyperX HX426C15FBK2/8 is a kit of two 512M x 64-bit (4GB) DDR4–2666 CL15 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module kit supports Intel® Extreme Memory Profiles (Intel® XMP) 2.0. Total kit capacity is 8GB. Each module has been tested to run at DDR4–2666 at a low latency timing of 15–17–17 at 1.2V. Additional timing parameters are shown in the Plug-N-Play (PnP) Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:
JEDEC/XMP TIMING PARAMETERS
- JEDEC/PnP:
- DDR4–2666 CL15–17–17 @1.2V
- DDR4–2400 CL14–16–16 @1.2V
- DDR4–2133 CL12–14–14 @1.2V
- XMP Profile #1: DDR4–2666 CL15–17–17 @1.2V
FEATURES
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP – 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- Height 1.340” (34.04mm), w/heatsink
SPECIFICATIONS
- CL(IDD): 15 cycles
- Row Cycle Time (tRCmin): 45ns(min.)
- Refresh to Active/Refresh Command Time (tRFCmin): 260ns(min.)
- Row Active Time (tRASmin): 26.25ns(min.)
- Maximum Operating Power: TBD W*
- UL Rating: 94 V – 0
- Operating Temperature:0 C to +85 C
- Storage Temperature: –55 C to +100 C