Abstract
The demand for flexible electronics in electronic devices has increased significantly due to the advantages of flexible electronics in lightweight mechanical flexibility and durability. In this work, a pure aluminum (Al) electrode thin film (158–179 nm) with outstanding electrical properties, which can naturally generate a protective layer is presented, was successfully prepared on flexible substrates (polyimide, PI) using a vacuum evaporation method. The best electrical property of Al thin film (3.32 × 10–8 Ω m) is close to the resistivity of bulk Al materials due to the dense and continuous structure. In addition, aluminum oxide (Al2O3) thin film generated naturally on the surface of Al thin film plays a protective role, making the electrical performance of Al thin film electrode more stable at high temperature. Hence, the resistivity of Al films performs good stability with an increase by 0.03% after annealing at 100 °C in the air. After being placed for half a year, the resistivity of the film on PI substrate only increased by 0.027%. The electrode film was flexible enough to withstand 5 × 103 bending cycles with a 6-mm bending diameter. This surface oxidation multi-layer film with enhanced electrical performance and stability provides an experiment basis for the application and industrialization of Al thin film electrodes in the future.
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Acknowledgements
The work was supported by the National Natural Science Foundation of China (Grant No. 61704006), Beijing Nova Programme Interdisciplinary Cooperation Project (Grant No. Z191100001119013), the Scientific Research Project of Beijing Educational Committee (Grant No. KM202111232015), and the Supplementary and Supportive Project for Teachers at Beijing Information Science and Technology University (2019–2021) (Grant No. 5029011103).
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Wang, T., Cao, L. & Miao, M. A flexible aluminum thin film electrode with enhanced electrical property and stability via a facial method. J Mater Sci: Mater Electron 32, 28772–28780 (2021). https://doi.org/10.1007/s10854-021-07262-x
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DOI: https://doi.org/10.1007/s10854-021-07262-x